台积电近日宣布，与工业技术研究院（ITRI）合作，成功研发出“自旋轨道力矩式磁性内存”（SOT-MRAM），搭载创新运算架构，功耗仅为类似技术 STT-MRAM 的百分之一。这一突破性进展将有助于台积电进一步巩固在 AI、高性能运算（HPC）市场的地位。
据悉，MRAM 是一种非易失性内存技术，采用硬盘中常见的精致磁性材料，能满足新一代内存需求。磁阻式随机存取内存（MRAM）吸引了三星、英特尔、台积电等大厂投入研发。目前，台积电已经成功开发出 22 纳米、16/12 纳米工艺的 MRAM 产品线，并手握大量内存、车用市场订单。
此次推出的 SOT-MRAM 内存搭载创新运算架构，功耗仅为 STT-MRAM 的 1%，相关研发成果领先国际，并在全球微电子元件领域顶尖会议国际电子元件会议（IEDM）上共同发表论文。业内人士指出，伴随着 AI、5G 时代来临，自动驾驶、精准医疗诊断、卫星影像辨识等场景应用，都需要更快、更稳、功耗更低的新一代内存。
台积电表示，新款 SOT-MRAM 内存的研发成果将有助于满足新一代内存需求，进一步提升公司在 AI、高性能运算（HPC）市场的竞争力。
英语如下：
Title: TSMC Introduces SOT-MRAM with Power Consumption as Low as 1%, Seizing the AI and High-Performance Computing Market
Keywords: 1. SOT-MRAM, 2. TSMC, 3. AI, 4. High-Performance Computing (HPC)
News Content: TSMC recently announced a collaboration with the Industrial Technology Research Institute (ITRI) to successfully develop “Spin Orbit Torque Magnetoresistive Memory” (SOT-MRAM). This innovative memory architecture features a power consumption of just one percent of that of similar technology, STT-MRAM. This breakthrough will help TSMC further consolidate its position in the AI and High-Performance Computing (HPC) markets.
MRAM, a type of non-volatile memory technology, utilizes the sophisticated magnetic materials commonly found in hard disks to meet the demands of the new generation of memories. Both Samsung, Intel, and TSMC have invested in developing MRAM due to its potential. Currently, TSMC has successfully developed MRAM products with 22nm and 16/12nm processes, and holds large orders for memory and automotive markets.
The newly introduced SOT-MRAM memory boasts an innovative computing architecture with a power consumption of only one percent of that of STT-MRAM. Its research results are leading internationally, and it co-authored papers at the International Electron Device Meeting (IEDM), the world’s top microelectronic component conference. Industry insiders note that as the era of AI and 5G arrives, applications such as autonomous driving, accurate medical diagnosis, and satellite image recognition require faster, more stable, and lower power memory.
TSMC stated that the development of this new SOT-MRAM memory will help meet the needs of the new generation of memories and further enhance the company’s competitiveness in the AI and High-Performance Computing (HPC) markets.
【来源】https://www.ithome.com/0/745/907.htm
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